1 7 - ELM36601EA-S complementary mosfet ELM36601EA-S uses advanced trench technology to provide excellent rds(on) and low gate charge. n-channel p-channel ? vds=30v vds=-30v ? id=3.5a id=-2a ? rds(on) < 58m(vgs=10v) rds(on) < 115m(vgs=-10v) ? rds(on) < 88m(vgs=4.5v) rds(on) < 185m(vgs=-4.5v) parameter symbol n-ch (max.) p-ch (max.) unit note drain - source voltage vds 30 -30 v gate - source voltage vgs 20 20 v continuous drain current ta=25c id 3.5 -2.3 a ta=70c 2.8 -1.8 pulsed drain current idm 10 -10 a 3 power dissipation ta=25c pd 1.15 1.15 w ta=70c 0.73 0.73 junction and storage temperature range tj,tstg - 55 to 150 - 55 to 150 c general description features maximum absolute ratings thermal characteristics pin configuration circuit ? n-ch ? p-ch parameter symbol device typ. max. unit note maximum junction - to - ambient t5s rja n-ch 110 c /w maximum junction - to - ambient steady-state 150 maximum junction - to - lead steady-state rjl 80 maximum junction - to - ambient t5s rja p-ch 110 c /w maximum junction - to - ambient steady-state 150 maximum junction - to - lead steady-state rjl 80 sot-26(top view) pin no. pin name 1 gate1 2 source2 3 gate2 4 drain2 5 source1 6 drain1 1 3 5 6 2 4 s 2 g 2 d 2 s 1 g 1 d 1
2 electrical characteristics (n-ch) ta=25c parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs = 0v 1 a vds=20v, vgs = 0v, tj=55c 10 gate - body leakage current igss vds=0v, vgs=20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250a 1.0 1.5 2.5 v on state drain current id(on) vgs=10v, vds=5v 8 a 1 static drain - source on - resistance rds(on) vgs=10v, id= 3.5a 50 58 m 1 vgs = 4.5v, id = 2a 69 88 forward transconductance gfs vds = 5v, id =2. 5a 4.5 s 1 diode forward voltage vsd if = 0.8a, vgs=0v 1.2 v 1 dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 202 pf output capacitance coss 40 pf reverse transfer capacitance crss 20 pf switching parameters total gate charge qg vgs=10v, vds=15v, id=3.5a 2.6 3.9 nc 2 gate - source charge qgs 0.9 nc 2 gate - drain charge qgd 0.6 nc 2 turn - on delay time td(on) vgs=10v, vds=15v, id1a rl=15, rgen=6 7 11 ns 2 turn - on rise time tr 12 18 ns 2 turn - off delay time td(off) 12 18 ns 2 turn - off fall time tf 7 11 ns 2 body - diode reverse recovery time trr if =0.8 a, dl/dt = 100a/s 40 80 ns complementary mosfet ELM36601EA-S 7 - note : 1. pulse test : pulse width 300sec, duty cycle 2%. 2. independent of operating temperature. 3. pulse width limited by maximum junction temperature. 4. duty cycle 1%.
3 7 - complementary mosfet ELM36601EA-S typical electrical and thermal characteristics 4 apr-03-2006 n- & p-channel enhancement mode field effect transistor p5803nag tsop-6 lead-free niko-sem n-channel 10 8 6 4 2 0 0 1 2 3 4 v gs = 10v 6.0v 4.5v 4.0v 3.5v 3.0v on-region characteristics. i d , drain-source current(a) v ds , drain-source voltage(v) 0.275 0.225 0.125 0.175 0.075 0.025 2 4 6 8 10 v gs , gate to source voltage(v) r ds(on) , on-resistance(ohm) on-resistance variation with gate-to-source voltage. i d =2a t a = 125c t a = 25c 0 2 4 6 8 10 6 5 4 3 2 1 v gs , gate to so urce voltage(v) i d , drain current(a) v ds = 5v t a = -55 c 125 c 25 c transfer characteristics. 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forword voltage(v) i s , reverse drain current (a) v gs = 0v t a = 125 c 25c -55 c body diode forword voltage variation with source current an d temperature. 0.8 1.2 1 1.6 1.4 0.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature(c) i d = 3.5a v gs = 10v on-resistance variation with temperature. r ds(on) , normalized drain-source on-resistance 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 v gs = 4.0v 4.5v 5.0v 6.0v 7.0v 10v i d , drain current(a) r ds(on) , noemalized drain-source on-resistance on-resistance variation with drain current and gate voltage.
4 complementary mosfet ELM36601EA-S 7 - 5 apr-03-2006 n- & p-channel enhancement mode field effect transistor p5803nag tsop-6 lead-free niko-sem 10 8 6 4 2 0 0 i d = 3.5a v ds = 5v 10v 15v 1 2 3 4 v gs , gate-source voltage(v) q g, gate charge(nc) gate-charge characteristics 400 300 200 100 0 0 5 10 15 20 25 30 capacitance(pf) c rss c oss c iss capacitance characteristics v ds ,drain to source voltage(v) 0.1 0.3 1 3 10 30 50 v ds , drain-source voltage(v) 0.03 0.1 0.3 1 3 10 30 i d , drain current(a) v gs = 10v single pulse r ja =150 c/w t a =25 c r d s ( o n ) l i m i t maximum safe operating area. 1 0 0 u s 1 m s 1 0 m s 1 0 0 m s 1 s d c 0.01 single pulse maximum power dissipation. 5 4 3 2 1 0 0.01 0.1 1 10 100 300 power(w) single pulse time(sec) v gs = 10v single pulse r ja =150c/w t a =25c
5 ta=25 c complementary mosfet ELM36601EA-S 7 - electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id= - 250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v - 1 a vds=-20v, vgs= 0v, tj=55c -10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id= - 250a -1.0 -1.5 -2.5 v on state drain current id(on) vgs= - 10v, vds= - 5v -8 a 1 static drain - source on - resistance rds(on) vgs=-10v, id=-2.3 a 95 115 m 1 vgs =- 4.5v, id =- 1.5a 145 185 forward transconductance gfs vds =- 5v, id =-2 a 3 s 1 diode forward voltage vsd if =- 0.8a, vgs=0v -1.2 v 1 dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 225 pf output capacitance coss 60 pf reverse transfer capacitance crss 30 pf switching parameters total gate charge qg vgs=-10v, vds=-15v id=-2a 2.8 4.2 nc 2 gate-source charge qgs 1.0 nc 2 gate-drain charge qgd 0.7 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v, id-1a rl=15, rgen=6 8 12 ns 2 turn - on rise time tr 11 18 ns 2 turn - off delay time td(off) 14 21 ns 2 turn - off fall time tf 8 12 ns 2 body - diode reverse recovery time trr if =-0.8 a, dl/dt = 100a/s 40 80 ns note : 1. pulse test : pulse width 300sec, duty cycle 2%. 2. independent of operating temperature. 3. pulse width limited by maximum junction temperature.
6 complementary mosfet ELM36601EA-S 7 - typical electrical and thermal characteristics 6 apr-03-2006 n- & p-channel enhancement mode field effect transistor p5803nag tsop-6 lead-free niko-sem p-channel on-region characteristics i d ,drain current(a) - v ds ,drain-source voltage(v) 10 8 6 4 2 0 5 4 3 2 1 0 v gs = -10v - 6.0v - 4.5v - 4.0v - 3.5v on-resistance variation with drain current and gate voltage. r ds(on) ,normalized drain-source on-resistance 10 8 6 4 0 2 -10.0v v gs =-3.5v 0.5 1 1.5 2 2.5 3 - i d ,drain current(a) - 4.5v - 4.0v - 5.0v - 6.0v on-resistance variation with temperature t j ,junction temperature(c) r ds(on) ,normalized drain-source on-resistance v gs = -10v 1.6 1.4 1.2 1 0.8 0.6 150 125 100 75 50 25 0 -25 -50 i d = -2.3a on-resistance variation with gate-to-source voltage. r ds(on) ,on-resistance(ohm) - v gs ,gate to source voltage(v) i d = -1.5a t a =125c t a =25c 0.4 0.3 0.2 0.1 0 10 6 5 4 2 transfer characteristics -i d ,drain current(a) 5 4 3 2 1 125c 25c 0 4.5 3.5 2.5 1.5 v ds = - 5v t a = - 55c -v gs ,gate to source voltage(v) body diode forward voltage variation with source current and temperature. -i s ,reverse drain current(a) -v sd ,body diode forward voltage(v) v gs =0v t a =125c 25c 10 1 0.1 0.01 0.001 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 - 55c
7 complementary mosfet ELM36601EA-S 7 - 7 apr-03-2006 n- & p-channel enhancement mode field effect transistor p5803nag tsop-6 lead-free niko-sem 0.1 0.3 1 3 10 30 50 v ds , drain-source voltage(v) 0.03 0.1 0.3 1 3 10 30 i d , drain current(a) v gs = 10v single pulse r ja =150 c/w t a =25 c r d s ( o n ) l i m i t maximum safe operating area. 1 0 0 u s 1 m s 1 0 m s 1 0 0 m s 1 s d c 0.01 single pulse maximum power dissipation. 5 4 3 2 1 0 0.01 0.1 1 10 100 300 power(w) single pulse time(sec) v gs = 10v single pulse r ja =150c/w t a =25c 1 0.5 0.2 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 p(pk) t1 t2 t j -t a =p*r ja (t) duty cycle, d= t 1 / t 2 r ja =150c/w r ja (t) = r(t) * r " + t1 time(sec) r(t), normalized effective transient thermal resistance transient thermal response curve. d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse crss coss ciss capacitance(pf) 30 25 20 15 10 5 0 0 100 200 300 400 capacitance characteristics v ds ,drain to source voltage(v) 10 8 6 4 2 0 0 1 2 3 4 v gs , gate-source voltage(v) q g, gate charge(nc) gate-charge characteristics i d = -2a v ds = -5v -10v -15v
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